2

Epitaxial GaAs by close space vapor transport

Year:
1983
Language:
english
File:
PDF, 596 KB
english, 1983
10

Modeling halogen chemical vapor deposition for III–V semiconductor compounds

Year:
2001
Language:
english
File:
PDF, 193 KB
english, 2001
12

On the detailed mechanism of the burn-in in GaInP/GaAs HBTs

Year:
2005
Language:
english
File:
PDF, 159 KB
english, 2005
14

Burn-in effects in GaInP/GaAs/GaAs HBTs

Year:
2003
Language:
english
File:
PDF, 69 KB
english, 2003
15

On the energy band structure of the GaInP/GaAs heterojunction bipolar transistor

Year:
2007
Language:
english
File:
PDF, 265 KB
english, 2007
17

Electric and photovoltaic properties of CdTe pn homojunctions

Year:
1979
Language:
english
File:
PDF, 376 KB
english, 1979
20

Sublimation and chemical vapor transport, a new method for the growth of bulk ZnSe crystals

Year:
1995
Language:
english
File:
PDF, 319 KB
english, 1995
25

Acceptor reactivation kinetics in heavily carbon-doped GaAs epitaxial layers

Year:
2000
Language:
english
File:
PDF, 297 KB
english, 2000
28

Burn-in effect on GaInP heterojunction bipolar transistors

Year:
2003
Language:
english
File:
PDF, 295 KB
english, 2003
30

Direct measurement of the recombination velocity on a grain boundary

Year:
1984
Language:
english
File:
PDF, 404 KB
english, 1984
33

Impurity incorporation in vapor phase epitaxy: S in GaAs

Year:
1995
Language:
english
File:
PDF, 697 KB
english, 1995
34

Free electron gas primary thermometer: The bipolar junction transistor

Year:
2013
Language:
english
File:
PDF, 575 KB
english, 2013
37

Carbon site switching in carbon-doped GaAs

Year:
2002
Language:
english
File:
PDF, 230 KB
english, 2002
41

Oxygen in gallium arsenide

Year:
1991
Language:
english
File:
PDF, 1.01 MB
english, 1991
43

Semi-insulating epitaxial GaAs

Year:
1990
Language:
english
File:
PDF, 596 KB
english, 1990